Synthesis and electrical property measurements of individual layered transition metal dichalcogenide nanotubes and nanowires
Date
2008
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Abstract
Nanotubes of the layered transition metal dichalcogenides (LTMDs) including MoS2, WS2, ReS2, and ReSe 2 have been synthesized. Additionally, nanowires of WS2 have been synthesized. All of the 1-dimensional structures synthesized used some form of a template to structurally direct 1-dimensional growth. The synthesis of the nanotubes of MoS2, WS2, and ReS2 utilized the pores of anodic aluminum oxide membranes to direct nanotube growth. WS 2 nanowires were grown with the assistance of the surfactant cetyltrimethylammonium bromide. ReSe2 nanotubes were synthesized by using Se nanotubes as a sacrificial template. The nanotubes and nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Information about the shape, identity, and nanostructure was gained utilizing these techniques. Electron beam lithography was used to make electrical contacts to the nanowires. Once the contacts were made, two point room temperature current voltage curves were recorded for MoS2, ReS2, and ReSe 2 nanotubes. The current voltage characteristics displayed I-V curves that were nearly linear, nearly symmetric, and nearly rectifying for these systems. The currents passed through these nanotubes ranged from nanoamperes to microamperes. Additional experiments on ReSe2 nanotubes indicated a change in resistance with exposure to ammonia and photocurrent generation when exposed to light.
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Subject
dichalcogenide
electrical property
layered transition metal dichalcogenide
nanotubes
nanowires
transport
analytical chemistry
inorganic chemistry