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Fabrication and performance of selectively oxidized vertical-cavity lasers

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Hull, Robert, author

Figiel, J. J., author

Geib, Kent M., author

Schneider, Richard P., author

Lear, Kevin L., author

Choquette, Kent D., author

IEEE, publisher

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We report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. We show that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors. The oxide layers do not induce obvious crystalline defects, and continuous wave operation in excess of 650 h has been obtained. The high yield fabrication enables relatively high laser performance over a wide wavelength span. We observe submilliamp threshold currents over a wavelength range of up to 75 nm, and power conversion efficiencies at 1 mW output power of greater than 20% over a 50-nm wavelength range.

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III-V semiconductors

aluminium compounds

distributed Bragg reflector lasers

gallium arsenide

laser cavity resonators

oxidation

quantum well lasers

surface emitting lasers

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