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Reflection high-energy electron diffraction patterns of carbide-contaminated silicon surfaces

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dc.contributor.authorLong, Robert G., author
dc.contributor.authorBecker, James P., author
dc.contributor.authorMahan, John E., author
dc.contributor.authorAmerican Vacuum Society, publisher
dc.date.accessioned2007-01-03T08:10:30Z
dc.date.available2007-01-03T08:10:30Z
dc.date.issued1994
dc.description.abstractCarbon contamination of silicon surfaces is a longstanding concern for growers of thin films who utilize silicon wafer substrates. This contamination often takes the form of epitaxial β-SiC particles which grow after the decomposition of adsorbed carbon-bearing molecules, and the subsequent reaction of the freed carbon with the silicon substrate. Positive identification of such SiC contamination is possible via reflection high-energy electron diffraction (RHEED). To provide a complete demonstration and analysis of the relevant RHEED patterns, we prepared within a "silicon molecular beam epitaxy" system carbide-contaminated silicon surfaces using procedures intended to foster such contamination. With conventional RHEED instrumentation, we obtained transmission electron diffraction patterns which resulted from the passage of the RHEED electron beam laterally through the SiC particles. Comparison with theoretically predicted patterns positively identifies the β-SiC phase and shows that the particles are epitaxially aligned, with their cubic axes parallel to those of the substrate. {This finding is in agreement with the widely accepted model for the behavior of carbon on silicon surfaces [Henderson et al., J. Appl. Phys. 42, 1208 (1971)]}. More typically during in-situ silicon substrate preparation for thin film growth, RHEED patterns indicating such contamination contain SiC spots which are mere vestiges of the complete transmission diffraction patterns presented in this work.
dc.format.mediumborn digital
dc.format.mediumarticles
dc.identifier.bibliographicCitationBecker, James P., Robert G. Long, and John E. Mahan, Reflection High-Energy Electron Diffraction Patterns of Carbide-Contaminated Silicon Surfaces, Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films 12, no. 1 (January/February 1994): 174-178.
dc.identifier.urihttp://hdl.handle.net/10217/67934
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartofFaculty Publications
dc.rights©1994 American Vacuum Society.
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.titleReflection high-energy electron diffraction patterns of carbide-contaminated silicon surfaces
dc.typeText

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