Investigating plasma modifications and gas-surface reactions of TiO2-based materials for photoconversion
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Plasmas offer added flexibility for chemists in creating materials with ideal properties. Normally unreactive precursors can be used to etch, deposit and modify surfaces. Plasma treatments of porous and compact TiO2 substrates were explored as a function of plasma precursor, substrate location in the plasma, applied rf power, and plasma pulsing parameters. Continuous wave O2 plasma treatments were found to reduce carbon content and increase oxygen content in the films. Experiments also reveal that Si was deposited throughout the mesoporous network and by pulsing the plasma, Si content and film ...