Van der Waals epitaxial growth of GaSe on Si(111), The
GaSe, a layered semiconductor, may be grown on the Si(111) surface by molecular beam epitaxy. The crystalline quality is relatively good, in the sense that the MeV4He ion minimum channeling yield (~30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt. The initial film deposits are epitaxial islands, and subsequent growth is in the Frank-van der Merwe mode. With the islands already relaxed at the nucleation stage and coalescing to essentially uniform coverage with the first monolayer of deposition, GaSe on Si(111) provides an example of van der Waals ...
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