X-ray characterization of oriented β-tantalum films
Tantalum (Ta) metal films (10–70 nm) were deposited on a Si(100) substrate with a 500 nm silicon dioxide (SiO2) interlayer by ion-beam assisted sputtering. The as-deposited films have been characterized by X-ray diffraction (XRD) and X-ray reflectivity (XRR) techniques. XRD measurements showed the presence of films of the tetragonal phase of tantalum (β-Ta) oriented along the (00l) plane. XRR measurements indicated the presence of graded Ta films, with a thin interface layer between the 500 nm SiO2 layer and the Ta films. The thickness and density of this interface layer was estimated to be ...
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