Silicon nitride films deposited with an electron beam created plasma

Collins, G. J., author; Zarnani, H., author; Thompson, L. R., author; Rocca, Jorge J., author; Emery, K. A., author; Bishop, D. C., author; American Institute of Physics, publisher

Silicon nitride films deposited with an electron beam created plasma

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ECEjjr00013.pdf (258.55 KB)

Date

1984

Authors

Collins, G. J., author

Zarnani, H., author

Thompson, L. R., author

Rocca, Jorge J., author

Emery, K. A., author

Bishop, D. C., author

American Institute of Physics, publisher

Abstract

Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported.

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http://hdl.handle.net/10217/67451

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Silicon nitride films deposited with an electron beam created plasma

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