CSU Home
    • Login
    View Item 
    •   Mountain Scholar Home
    • Colorado State University, Fort Collins
    • CSU Departments and Programs
    • Department of Electrical and Computer Engineering
    • Faculty Publications - Department of Electrical and Computer Engineering
    • View Item
    •   Mountain Scholar Home
    • Colorado State University, Fort Collins
    • CSU Departments and Programs
    • Department of Electrical and Computer Engineering
    • Faculty Publications - Department of Electrical and Computer Engineering
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Silicon nitride films deposited with an electron beam created plasma

    Thumbnail
    Citable Link(s)
    http://hdl.handle.net/10217/67451
    Download/View
    ECEjjr00013.pdf (258.5Kb)
    View full record
    Altmetrics
    Abstract
    Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported.
    Author(s)
    Collins, G. J.; Zarnani, H.; Thompson, L. R.; Rocca, Jorge J.; Emery, K. A.; Bishop, D. C.

    Date Issued
    1984
    Format
    born digital; articles
    Collections
    • Faculty Publications - Department of Electrical and Computer Engineering

    DSpace software   copyright © 2002-2016   DuraSpace
    Contact Us | Send Feedback
    Registered Repository
    RE3 Certified
    HTML Sitemap  

     

    Browse

    All of Mountain ScholarCommunities & CollectionsDatesAuthorsTitlesSubjectsThis CollectionDatesAuthorsTitlesSubjects

    My Account

    LoginRegister

    Statistics

    View Usage Statistics

    DSpace software   copyright © 2002-2016   DuraSpace
    Contact Us | Send Feedback
    Registered Repository
    RE3 Certified
    HTML Sitemap