Laser-induced chemical vapor deposition of SiO2
We have demonstrated rapid (3000 Å/min) photochemical deposition of silicon dioxide from gas phase donor molecules. An ArF (193 nm) laser was used to excite and dissociate gas phase SiH4 and N2O molecules in contrast to earlier work with incoherent mercury lamps. We have achieved 20 times the deposition rate, limited the dissociation volume to a localized region, and minimized the direct impingement of UV photons on the substrate. Although the SiO2 deposition rate was insensitive to substrate temperature from 20 to 600 °C, film quality noticeably improved above 200 °C, Metal-oxide-semiconductor ...