Role of plasma-surface interactions in process chemistry: mechanistic studies of a-CNx deposition and SF6/O2 etching of silicon, The
The molecular level chemistry of a-CNx deposition in plasma discharges was studied with emphasis on the use of CH3CN and BrCN as single source precursors for these films. Characterization of the global deposition behavior in these systems indicates that the resulting films are relatively smooth and contain significant levels of N-content, with N/C > 0.3. Notably, films obtained from BrCN plasmas are observed to delaminate upon their exposure to atmosphere, and preliminary investigation of this behavior is presented. Detailed chemical investigation of the deposition process focuses primarily on ...
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