| dc.contributor.author | Menoni, Carmen S. |
| dc.contributor.author | Buccafusca, O. |
| dc.contributor.author | Marconi, Mario Carlos |
| dc.contributor.author | Patel, Dineshchandra |
| dc.contributor.author | Rocca, Jorge, J. |
| dc.contributor.author | Robinson, G. Y. |
| dc.contributor.author | Goodnick, Stephen M. |
| dc.date.accessioned | 2015-07-28T16:06:29Z |
| dc.date.available | 2015-07-28T16:06:29Z |
| dc.date.issued | 1997 |
| dc.description | Includes bibliographical references (page 104). |
| dc.description.abstract | Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination. |
| dc.description.sponsorship | This work is supported by the National Science Foundation through Grant Nos. DMR 9321422, ECS-9502888, EEC-9015128, the Colorado Advanced Technology Institute, Grant No. 0594.75.0738, and by AFOSR contract F49620-93-1-0021. |
| dc.format.medium | born digital |
| dc.format.medium | articles |
| dc.identifier.bibliographicCitation | Menoni, C. S., et al., Effect of Indirect Γ-L and Γ-X Transfer on the Carrier Dynamics of InGaP/InAlP Multiple Quantum Wells, Applied Physics Letters 70, no. 1 (6 January 1997): 102-104. |
| dc.identifier.uri | http://hdl.handle.net/10217/2121 |
| dc.language | English |
| dc.publisher | Colorado State University. Libraries |
| dc.publisher.original | American Institute of Physics |
| dc.relation.ispartof | Faculty Publications - Department of Electrical and Computer Engineering |
| dc.rights | ©1997 American Institute of Physics |
| dc.subject | semiconductor quantum wells |
| dc.subject | indium compounds |
| dc.subject | gallium compounds |
| dc.subject | phosphorus compounds |
| dc.subject | aluminium compounds |
| dc.subject | scattering |
| dc.subject | carrier lifetime |
| dc.subject | absorption |
| dc.subject | band structure |
| dc.title | Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells |
| dc.type | Text |
