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Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells

Date

1997

Authors

Menoni, Carmen S., author
Buccafusca, O., author
Marconi, Mario Carlos, author
Patel, Dineshchandra, author
Rocca, Jorge, J., author
Robinson, G. Y., author
Goodnick, Stephen M., author
American Institute of Physics, publisher

Journal Title

Journal ISSN

Volume Title

Abstract

Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination.

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Subject

semiconductor quantum wells
indium compounds
gallium compounds
phosphorus compounds
aluminium compounds
scattering
carrier lifetime
absorption
band structure

Citation

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