Strategies to Enhance Etch Selectivity During Plasma-Assisted Atomic Layer Etching of Silicon-Based Dielectrics
Stringent processing windows are required for the fabrication of sub-7-nm semiconductor devices, which in turn place severe constraints on conventional plasma-assisted etching. Atomic layer etching (ALE) is a promising etching technique that can provide high etch fidelity, directionality, atomic-scale control, and selectivity to meet and even exceed the process constraints. In this work, we primarily focused on two research objectives: identification of the underlying surface phenomena during ALE of both SiO2 and SiNx using in situ attenuated total reflection Fourier transform infrared spectroscopy ...
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