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dc.contributor.authorSchenken, William K.
dc.contributor.authorAiruoyo, Idemudia
dc.contributor.authorCollins, Reuben T.
dc.contributor.institutionColorado School of Mines. McBride Honors Program
dc.description.abstractAs new materials continue to develop through theoretical and experimental findings, it is desirable to have a reliable method of testing the materials to better understand their unique properties. Reliable computer modelling of electronic devices composed of these materials provides an inexpensive means of determining how a material will perform. Here we demonstrate the use of a computer software to accurately model electronic devices. We focus on amorphous silicon thin-film transistors and relate what is observed computationally to published experimental and theoretical results. We show that the computer models can be used to accurately study materials for applications in advanced electronic devices. We then discuss opportunities in new materials discovery that this type of modelling might permit.
dc.format.mediumjournals (periodicals)
dc.format.mediumresearch (documents)
dc.publisherColorado School of Mines. Arthur Lakes Library
dc.publisher.originalColorado School of Mines. Reuleaux
dc.relation.ispartofReuleaux 2020
dc.relation.ispartofReuleaux Undergraduate Research Journal
dc.rights©2020 Reuleaux, Colorado School of Mines
dc.rightsCopyright of the original work is retained by the authors.
dc.rightsAll works are licensed under a Creative Commons CC BY-NC License:
dc.subjectElectronic devices -- Computer simulation
dc.subject.lcshThin film transistors
dc.titleModelling thin-film transistors for understanding material properties and improving electronic device performance

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©2020 Reuleaux, Colorado School of Mines
Except where otherwise noted, this item's license is described as ©2020 Reuleaux, Colorado School of Mines