Collins, G. J., authorEmery, K., authorRocca, Jorge J., authorBishop, D., authorGobis, L., authorThompson, L. R., authorECS - The Electrochemical Society, publisher2007-01-032007-01-031984Thomspon, L. R., et al., Conformal Step Coverage of Electron Beam‐Assisted CVD of SiO2 and Si3 N 4 Films, [Journal of the Electrochemical Society 131, no. 2 (1984)]: 462-463.http://hdl.handle.net/10217/67450We have recently reported electron beam assisted chemical vapor deposition (CVD) of silicon dioxide (SiO2) and silicon nitride(Si3N4) films at low (200°C) substrate temperatures(1,2,3). Herein, we examine the ability of the electron beam deposition technique to conformally cover patterned aluminum and polysilicon steps.born digitalarticleseng©1984 ECS - The Electrochemical Society.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text