Vantomme, André, authorLong, Robert G., authorNicolet, Marc-A., authorMahan, John E., authorAmerican Institute of Physics, publisher2007-01-032007-01-031994Vantomme, André, et al., Epitaxial Ternary RexMo1-xSi2 Thin Films on Si(100), Journal of Applied Physics 75, no. 8 (15 April 1994): 3924-3927.http://hdl.handle.net/10217/67932Reactive deposition epitaxy was used to synthesize thin layers of RexMo1-xSi2 on Si(100). In the case of x>=1, ReSi2 layers of excellent crystalline quality have been reported previously [J.E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of theMoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.born digitalarticleseng©1994 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text