Chu, S. N. G., authorLear, Kevin L., authorKlem, J. F., authorHafich, M. J., authorBlum, O., authorAmerican Institute of Physics, publisher2007-01-032007-01-031995Blum, O., et al., Electrical and Optical Characteristics of AlAsSb/GaAsSb Distributed Bragg Reflectors for Surface Emitting Lasers, Applied Physics Letters 67, no. 22 (27 November 1995): 3233-3235.http://hdl.handle.net/10217/814We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 µm with a maximum reflectivity exceeding 99%. We also measure current-voltage characteristics in a similar 10 1/2 period p-type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.born digitalarticleseng©1995 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.aluminium arsenidesaluminium compoundsantimonidesBragg reflectioncarrier mobilityelectrical propertiesgallium antimonidesgallium arsenidesmirrorsmolecular beam epitaxyreflectivitysemiconductor laserssuperlatticesText