Vinogradov, A. V., authorUspenskii, Yu. A., authorForsythe, M., authorRocca, Jorge J., authorBenware, B. R., authorArtioukov, I. A., authorIEEE, publisher2007-01-032007-01-031999Artioukov, I. A., et al., Determination of XUV Optical Constants by Reflectometry Using a High-Repetition Rate 46.9-nm Laser, IEEE Journal of Selected Topics in Quantum Electronics 5, no. 6 (November/December 1999): 1495-1501.http://hdl.handle.net/10217/67528We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9-nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.born digitalarticleseng©1999 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Soft X-ray laserXUV optical constantsXUV reflectometryText