Robinson, G. Y., authorVogt, T. J., authorLile, D. L., authorKim, J.-W., authorRocca, Jorge J., authorChilla, J. L. A., authorWatson, M. E., authorIEEE, publisher2007-01-032007-01-031995Watson, M. E., et al., Saturation Intensity and Time Response of InGaAs-InGaP MQW Optical Modulators, IEEE Journal of Quantum Electronics 31, no. 2 (February 1995): 254-260.http://hdl.handle.net/10217/67603We report modulation saturation and time response measurements on InGaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7 ± 0.1) kW/cm2 for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism determining both the speed and the saturation intensity. This conclusion is supported by results of theoretical calculations.born digitalarticleseng©IEEE 1995.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text