Emery, K., authorRocca, Jorge J., authorThompson, L. R., authorCollins, G. J., authorSociety for Photo-Optical Instrumentation Engineers, publisher2007-01-032007-01-031984Emery, K, et al., Electron Beam Assisted CVD of Silicon Dioxide and Silicon Nitride Films, Allen, Susan D., ed. Laser Assisted Deposition, Etching, and Doping: January 26-27, 1984, Los Angeles, California. Proc. SPIE 459, 82-89 (1984). Bellingham, Wash.: Society for Photo-Optical Instrumentation Engineers.http://hdl.handle.net/10217/67453A glow discharge electron beam has been used to deposit silicon dioxide (SiO2) and silicon nitride(Si3N4) films for microelectronic applications. Electron beam assisted CVD is a new technique in which the reaction volume is defined mainly by the geometry of the electron beam and offers the possibility of uniform deposition over large areas. The SiO2films were deposited in silane-nitrous oxide-nitrogen mixtures, and the Si3N4 films were deposited in silane ammonia-nitrogen mixtures. The films were deposited with a 2-4 kV electron beam parallel to the sample, at 0.1-1 Torr pressures, and at substrate temperatures from 50-400°C. The index of refraction, sthoichiometry, pinhole density, etch rate, conformal step coverage, and hydrogen bonding were measured.born digitalproceedings (reports)eng©1984 Society for Photo-Optical Instrumentation Engineers.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text