Rocca, Jorge J., authorVerhey, T. R., authorBoyer, P. K., authorAmerican Institute of Physics, publisher2007-01-032007-01-031988Verhey, T. R., J. J. Rocca, and P. K. Boyer, Anisotropic Plasma-Chemical Etching by an Electron-Beam-Generated Plasma, Journal of Applied Physics 63, no. 7 (1 April 1988): 2463-2466.http://hdl.handle.net/10217/67639Anisotropic etching of SiO2 has been achieved with a plasma generated by a broad-area low-energy (150-300 eV) electron beam in a He + CF4 atmosphere. Etch rates of up to 330 Å/min for SiO2 and 220 Å/min for Si were obtained. Etching occurred with good uniformity over the entire area exposed to the electron-beam-generated plasma. The fluxes of energetic charged particles to the sample surface are discussed in relation to their possible contribution to the etching process.born digitalarticleseng©1988 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text