Boyer, P. K., authorRitchei, W. H., authorRoche, G. A., authorCollins, George J., authorAmerican Institute of Physics, publisher2007-01-032007-01-031982Boyer, P. K., et al., Laser-Induced Chemical Vapor Deposition of SiO2, Applied Physics Letters 40, no. 8 (April 15, 1982): 716-719.http://hdl.handle.net/10217/67410We have demonstrated rapid (3000 Å/min) photochemical deposition of silicon dioxide from gas phase donor molecules. An ArF (193 nm) laser was used to excite and dissociate gas phase SiH4 and N2O molecules in contrast to earlier work with incoherent mercury lamps. We have achieved 20 times the deposition rate, limited the dissociation volume to a localized region, and minimized the direct impingement of UV photons on the substrate. Although the SiO2 deposition rate was insensitive to substrate temperature from 20 to 600 °C, film quality noticeably improved above 200 °C, Metal-oxide-semiconductor capacitors were fabricated and characterized in order to measure SiO2 electrical properties. Film composition was investigated using Auger and infrared spectroscopy techniques and showed that the SiO2 is stoichiometric and contains less than 5% nitrogen.born digitalarticleseng©1982 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text