Collins, George J., authorLin, Chongjie, authorZarnani, Hamid, authorSheng, Tien Yu, authorLuo, Zongnan, authorZu, Zengqi, authorIEEE, publisher2007-01-032007-01-031990Yu, Zengqi, et al., A Review of Microelectronic Film Deposition Using Direct and Remote Electron-Beam-Generated Plasmas, IEEE Transactions on Plasma Science 18, no. 5 (October 1990): 753-765.http://hdl.handle.net/10217/629Soft-vacuum-generated electron beams employed to create a large area plasma for assisting chemical vapor deposition (CVD) of thin films are reviewed. The electron beam plasma is used both directly, where electron impact dissociation of feedstock gases plays a dominant role, and indirectly in a downstream afterglow, where electron impact dissociation of feedstock reactants plays no role. Rather, photodissociation and metastable atom-molecule reactions dominate in the downstream afterglow. To better understand electron-beam-created plasmas using a slotted ring cathode, the transmitted beam spatial intensity profiles have been quantified from initial generation at a slotted line-shaped cold cathode through acceleration in the cathode sheath and propagation in the ambient gas. To better understand the role of photodissociation in downstream plasma-assisted CVD, the VUV output spectrum and VUV generation efficiency from electron-beam-excited plasmas have been measured. The properties of films deposited via both direct electron-beam-generated plasma-assisted CVD and downstream afterglow CVD are reviewed and compared to conventional plasma assisted CVD films.born digitalarticleseng©1990 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.electron beam effectsplasma CVDplasma CVD coatingsreviewsplasma-beam interactionsText