Nathan, Menachem, authorNicolet, Marc-A., authorBai, Gang, authorXinghua, Yan, authorLong, Robert G., authorRobinson, G. Y., authorGeib, Kent M., authorMahan, John E., authorAmerican Institute of Physics, publisher2007-01-032007-01-031990Mahan, John E, et al., Epitaxial Films of Semiconducting FeSi2 on (001) Silicon, Applied Physics Letters 56, no. 21 (21 May 1990): 2126-2128.http://hdl.handle.net/10217/67924Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si(001), with the azimuthal orientation being FeSi2 [010]Si〈110〉. This heteroepitaxial relationship has acommon unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.born digitalarticleseng©1990 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text