Russell, P. E., authorCollins, G. J., authorJohnson, T., authorRocca, Jorge J., authorMoore, Cameron A., authorAmerican Institute of Physics, publisher2007-01-032007-01-031983Moore, Cameron A., et al., Large Area Electron Beam Annealing, Applied Physics Letters 43, no. 3 (August 1, 1983): 290-292.http://hdl.handle.net/10217/67456We have achieved wide area (38 cm2) electron beam annealing of ion implanted silicon wafers using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up to 90 W/cm2 was used to anneal the 7-cm-diam central portion of boron-implanted (30 keV, 5 × 1015 atoms/cm2) n-type (100) silicon wafers 10 cm in diameter. Annealing was obtained without redistribution of the original dopant profile using a 15-s electron beam exposure. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.born digitalarticleseng©1983 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text