Mahan, John E., authorBecker, James P., authorLong, Robert G., authorAmerican Vacuum Society, publisher2007-01-032007-01-031995Becker, James P., John E. Mahan, and Robert G. Long, ReSi2 Thin-Film Infrared Detectors, Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films 13, no. 3 (May/June 1995): 1133-1135.http://hdl.handle.net/10217/67935Two types of thin-film infrared-sensing devices have been investigated using the narrow band-gap semiconductor, rhenium disilicide (Eg~0.1 eV). These are the ReSi2/n-Si heterojunction internal photoemission (HIP) detector and the ReSi2 thin-film photoconductor. The HIP device was found to be rectifying and to obey a Fowler-type law with a long-wavelength cutoff of ~2.1 μm (0.59 eV) at room temperature. In hopes of approaching the fundamental limit for a ReSi2-based photonic detector, ~12 μm (0.1 eV), the ReSi2 photoconductor was explored. Indeed, the spectral response (measured at 10 K) of the ohmic photoconductor was found to extend to 6 μm (the present limit of our measurement equipment), with no indication of a detection cutoff.born digitalarticleseng©1995 American Vacuum Society.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text