Becker, James P., authorLong, Robert G., authorMahan, John E., authorAmerican Institute of Physics, publisher2007-01-032007-01-031995Long, Robert G., James P. Becker, and John E. Mahan, Infrared Detection with a ReSi2 Thin Film Photoresistor, Applied Physics Letters 66, no. 7 (3 Febraury 1995): 875-876.http://hdl.handle.net/10217/67925Infrared detection was accomplished with the narrow bandgap semiconductor (~0.1 eV), ReSi2. Photoresistors were fabricated from a polycrystalline ReSi2 film grown on a silicon substrate. A light-induced decrease in resistance was observed, which was due both to film photoconductivity and to a light-sensitive contact resistance. The relative spectral response (measured at 10 K) in the wavelength range from 3000 to 6000 nm roughly follows the number of photons absorbed as estimated from the optical absorption coefficient of ReSi2. Thus, the sample is a quantum, rather than thermal, detector. The mechanism of detection is believed to be the intrinsic band-to-band photogeneration of excess free carriers, leading to photoconductivity and to the reduction in contact resistance. It is suggested that ReSi2 offers the potential for a new intrinsic semiconductor infrared detector technology, which may be integrated on a silicon chip, and whose absorption edge is well into the far-infrared range.born digitalarticleseng©1995 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text