Ng, H. M., authorMenoni, Carmen S., authorPatel, Dineshchandra, authorVaschenko, Georgiy O., authorCho, A. Y., authorAmerican Institute of Physics, publisher2007-01-032007-01-032002Vaschenko, G., et al., Nonlinear Macroscopic Polarization in GaN/AlxGa1-xN Quantum Wells, Applied Physics Letters 80, no. 22 (June 2002): 4211-4213.http://hdl.handle.net/10217/633We present experimental evidence of the nonlinear behavior of the macroscopic polarization in GaN/AlxGa1-xN quantum wells. This behavior is revealed by determining the barrier-well polarization difference as a function of applied hydrostatic pressure. The polarization difference and corresponding built-in electric field in the wells increase with applied pressure at a much higher rate than expected from the linear model of polarization. This result, universally observed in the quantum well structures with different AlN mole fraction in the barriers, is explained by the nonlinear dependence of the piezoelectric polarization in GaN and AlN on the strain generated by pressure.born digitalarticleseng©2002 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.gallium compoundsIII-V semiconductorswide band gap semiconductorsaluminium compoundssemiconductor quantum wellspiezoelectric semiconductorsdielectric polarisationhigh-pressure effectsText