Choquette, Kent D., authorLear, Kevin L., authorSchneider, Richard P., authorLeibenguth, Ronald E., authorIEEE, publisher2007-01-032007-01-031995Choquette, Kent D., et al., Gain-Dependent Polarization Properties of Vertical-Cavity Lasers, IEEE Journal of Selected Topics in Quantum Electronics 1, no. 2 (June 1995): 661-666.http://hdl.handle.net/10217/824We show that the partitioning of power into the two orthogonal eigen polarizations of infra-red gain-guided vertical-cavity lasers depends upon the relative spectral overlap of the nondegenerate polarization cavity resonances with the laser gain spectrum. Furthermore, at the condition where the polarization resonances and the peak laser gain are aligned, abrupt switching of power between the eigen polarizations is observed as the gain sweeps through the polarization resonances. The gain-dependence of the polarization requires spectral splitting between the eigen polarizations, which is found to be strongly influenced by local strain. The polarization of the fundamental and higher-order spatial modes can be selected and maintained for all InGaAs vertical-cavity lasers in a wafer simply by employing a 20 nm or greater blue-shift offset of the peak laser gain relative to the cavity resonances.born digitalarticleseng©1995 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.III-V semiconductorsgallium arsenideindium compoundslaser beamslaser cavity resonatorslaser modesmolecular beam epitaxial growthoptical fabricationquantum well laserssurface emitting lasersvapour phase epitaxial growthText