Thiagarajan, P., authorSchmerge, J. F., authorMenoni, Carmen S., authorMarconi, Mario Carlos, authorMartinez, Oscar Eduardo, authorRocca, Jorge J., authorHafich, M. J., authorLee, H. Y., authorRobinson, G. Y., authorAmerican Institute of Physics, publisher2015-07-282015-07-281991Thiagarajan, P., et al., Picosecond Absorption Dynamics of Photoexcited InGaP Epitaxial Films, Applied Physics Letters 59, no. 1 (1 July 1991): 90-92.http://hdl.handle.net/10217/2120The absorption recovery of a photoexcited InGaP epitaxial film 0.4 µm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 × 105 cm/s at room temperature.born digitalarticleseng©1991 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.indium phosphidesgallium phosphidesphotoconductivityoptoelectronic devicescarrier densityambipolar diffusionatom transportrecombinationtemperature dependenceps rangeText