Pihlstrom, B. G., authorThompson, L. R., authorSheng, T. Y., authorCollins, George J., authorAmerican Institute of Physics, publisher2007-01-032007-01-031992Pihlstrom, B. G., et al., Organometallic Vapor-Phase Homoepitaxy of Gallium Arsenide Assisted by a Downstream Hydrogen Afterglow Plasma in the Growth Region, Applied Physics Letters 60, no. 25 (June 22, 1992): 3144-3146.http://hdl.handle.net/10217/67409In situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The homoepitaxial activation energy dramatically changes from 62 kcal/mol for the pure thermal to 21 kcal/mol for the plasma-assisted growth. The carbon incorporation mechanism for the plasma-assisted growth at temperatures less than 400 °C has a distinct activation energy for carbon incorporation of 23 kcal/mol, independent of V-III ratios. At temperatures above 400 °C, the level of carbon incorporated in the films reaches a level that appears to be dependent on the gas-phase precursor V-III ratio. The activation energy of the low-temperature region is consistent with the surface decomposition of arsenic hydrides.born digitalarticleseng©1992 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text