Hou, Hong Q., authorLear, Kevin L., authorTemkin H., authorKuksenkov, D. V., authorAmerican Institute of Physics, publisher2007-01-032007-01-031997Kuksenkov, D., et al., Spontaneous Emission Factor in Oxide Confined Vertical-Cavity Lasers, Applied Physics Letters 70, no. 1 (6 January 1997): 13-15.http://hdl.handle.net/10217/816We report on measurements of the spontaneous emission factor for oxide-confined InGaAs vertical cavity surface emitting lasers. The spontaneous emission factor is determined as a function of the active layer volume from the measurement of small-signal harmonic distortion at threshold. For a 3×3 µm oxide aperture device we obtain spontaneous emission factor of 4.2• 10-2 at room temperature.born digitalarticleseng©1997 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.semiconductor lasersmode controllaser cavitiesdesigngallium arsenidesindium arsenidesemission spectrainfrared radiationharmonicsaperturesText