Malloy, K. J., authorFigiel, J. J., authorLear, Kevin L., authorLott, J. A., authorChoquette, Kent D., authorSchneider, Richard P., authorIEEE, publisher2007-01-032007-01-031994Schneider, R. P., et al., Efficient Room-Temperature Continuous-Wave AIGaInP/AIGaAs Visible (670 nm) Vertical-Cavity Surface-Emitting Laser Diodes, IEEE Photonics Technology Letters 6, no. 3 (March 1994): 313-316.http://hdl.handle.net/10217/835Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45°C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.born digitalarticleseng©1994 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.III-V semiconductorsaluminium compoundsgallium arsenideindium compoundslaser cavity resonatorssemiconductor lasersText