Chalmers, S. A., authorLear, Kevin L., authorIEEE, publisher2007-01-032007-01-031993Lear, K. L. and S. A. Chalmers, High Single-Mode Power Conversion Efficiency Vertical-Cavity Top-Surface-Emitting Lasers, IEEE Photonics Technology Letters 5, no. 9 (September 1993): 972-975.http://hdl.handle.net/10217/832We report advances in the power conversion (wall-plug) efficiency of vertical-cavity top-surface-emitting lasers. The devices were fabricated from molecular beam epitaxial layers using deep proton implants to define gain-guided lasers. The epitaxial structure included low resistance, piecewise linearly graded n-type and p-type mirrors, a triple In0.2Ga0.8As quantum-well active region, and a delta-doped contact layer. Power conversion efficiencies as high as 12.7% for continuous-wave single-mode operation were measured after several hours of device operation.born digitalarticleseng©1993 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.laser cavity resonatorsindium compoundsgallium arsenideIII-V semiconductorslaser modessemiconductor lasersText