Geib, K. M., authorKilcoyne, S. P., authorSchneider, R. P., authorChoquette, K. D., authorLear, Kevin L., authorIEE, publisher2007-01-032007-01-031995Lear, K. L., et al., Selectively Oxidised Vertical Cavity Surface Emitting Lasers with 50% Power Conversion Efficiency, Electronics Letters 31, no. 3 (2 February 1995): 208-209.http://hdl.handle.net/10217/67870Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5mW.born digitalarticleseng©1995 IEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.lasersvertical cavity surface emitting lasersText