Lear, Kevin L., authorTemkin, H., authorKuksenkov, D. V., authorGiudice, G. E., authorAmerican Institute of Physics, publisher2007-01-032007-01-031999Giudice, G. E., et al., Differential Carrier Lifetime in Oxide-Confined Vertical Cavity Lasers Obtained from Electrical Impedance Measurements, Applied Physics Letters 74, no. 7 (15 February 1999): 899-901.http://hdl.handle.net/10217/818Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 µA, to about 1 ns at a bias close to threshold. For a 6 × 6 µm2 oxide aperture device the threshold carrier density was nth ~ 2 × 1018cm-3. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ~ 11 cm2s-1 was obtained.born digitalarticleseng©1999 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.carrier lifetimesurface emitting laserscarrier densitycarrier mobilityText