Collins, G. J., authorZarnani, H., authorThompson, L. R., authorRocca, Jorge J., authorEmery, K. A., authorBishop, D. C., authorAmerican Institute of Physics, publisher2007-01-032007-01-031984Bishop, D. C., et al., Silicon Nitride Films Deposited with an Electron Beam Created Plasma, Applied Physics Letters 44, no. 6 (March 15, 1984): 598-600.http://hdl.handle.net/10217/67451Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported.born digitalarticleseng©1984 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text