Figiel, J. J., authorKilcoyne, Sean Patrick, authorLear, Kevin L., authorChoquette, Kent D., authorCrawford, Mary Hagerott, authorSchneider, Richard P., authorAmerican Institute of Physics, publisher2007-01-032007-01-031995Schneider, R. P., et al., Improved AlGaInP-Based Red (670-690 nm) Surface-Emitting Lasers with Novel C-Doped Short-Cavity Epitaxial Design, Applied Physics Letters 67, no. 3 (17 July 1995): 329-331.http://hdl.handle.net/10217/813A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability.born digitalarticleseng©1995 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.gallium phosphidesaluminium phosphides, indium phosphidessemiconductor laserslaser cavitiessuperlatticescrystal dopingcarbon additionsepitaxyfabricationdesignthreshold currentefficiencyText