Bost, M. C., authorMahan, John E., authorAmerican Institute of Physics, publisher2007-01-032007-01-031985Bost, M. C., and J. E. Mahan, Optical Properties of Semiconducting Iron Disilicide Thin Films, Journal of Applied Physics 58, no. 7 (1 October 1985): 2696-2703.http://hdl.handle.net/10217/67929Iron disilicide thin films were prepared by furnace reaction of ion beam sputtered iron layers with single-crystal silicon wafers and with low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon thin films. X-ray diffraction indicates the films are single-phase, orthorhombic, β-FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light-sensitive and light-emitting thin-film devices within the silicon microelectronics technology.born digitalarticleseng©1985 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text