Menoni, Carmen S., authorBuccafusca, O., authorMarconi, Mario Carlos, authorPatel, Dineshchandra, authorRocca, Jorge, J., authorRobinson, G. Y., authorGoodnick, Stephen M., authorAmerican Institute of Physics, publisher2015-07-282015-07-281997Menoni, C. S., et al., Effect of Indirect Γ-L and Γ-X Transfer on the Carrier Dynamics of InGaP/InAlP Multiple Quantum Wells, Applied Physics Letters 70, no. 1 (6 January 1997): 102-104.http://hdl.handle.net/10217/2121Indirect Γ-L scattering within the well, and real space carrier transfer to the barrier X1c states are shown to significantly affect the carrier dynamics in In0.48Ga0.52P/In0.5Al0.5P multiple quantum wells. When carriers transfer to the indirect states occurs, the carrier dynamics is modified by the slow return of the carriers from the low mobility states to the well. As a result, the absorption recovery time increases by almost an order of magnitude. Carrier transfer to the indirect states also increases the carrier lifetime to values characteristic of indirect recombination.born digitalarticleseng©1997 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.semiconductor quantum wellsindium compoundsgallium compoundsphosphorus compoundsaluminium compoundsscatteringcarrier lifetimeabsorptionband structureText