Meyer, Jack D., authorFukumoto, Jay T., authorMoore, Cameron Alden, authorCollins George J., authorBuser, James R., authorThompson, Lance Robert, authorIEEE, publisher2007-01-032007-01-031993Thompson, Lance R., et al., nmOS Device Characteristics in Electron-Beam-Recrystallized SOI, IEEE Transactions on Electron Devices 40, no. 7 (July 1993): 1270-1276.http://hdl.handle.net/10217/631Characteristics of n-channel MOSFET's fabricated in cold cathode electron-beam-recrystallized silicon-on-oxide layers have been examined. Assorted crystallographic defects exist in the recrystallized silicon layer ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these MOSFET transistors have characteristics approaching those fabricated in bulk silicon including = 828-cm2/V • s electron surface mobilities and 130-mV/ decade inverse subthreshold slopes. However, many of the devices tested exhibited leakage currents up to 10-6 A/µm, resulting in high inverse subthreshold slopes and reduced threshold voltages. Some effects of crystal imperfections on device behavior are discussed.born digitalarticleseng©1993 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.carrier mobilitydislocationselectron beam applicationsgrain boundariesinsulated gate field effect transistorsleakage currentsrecrystallisation annealingsemiconductor-insulator boundariesText