Robinson, G. Y., authorWoods, M., authorHafich, M. J., authorRocca, Jorge J., authorMenoni, C. S., authorChilla, J. L. A., authorBuccafusca, O., authorAmerican Institute of Physics, publisher2007-01-032007-01-031993Buccafusca, O., et al., Nonresonant Tunneling in InGaP/InAIP Asymmetric Double Quantum Wells, Applied Physics Letters 62, no. 4 (January 25, 1993): 399-401.http://hdl.handle.net/10217/67647Nonresonant tunneling rates have been measured in InGaP/InAlP asymmetric double quantum-well structures for which optical phonon assisted tunneling is energetically forbidden. For an initial photoexcited carrier density of 2.4 × 1011 cm-2, tunneling times of 220, 60, and less than 9 ps have been measured in samples with barrier thickness 4.5, 3.0, and 1.5 nm, respectively. The tunneling times were found to be strongly dependent on carrier density. The measured tunneling times and their dependence on carrier density are compatible with impurity scattering being the dominant mechanism assisting the tunneling.born digitalarticleseng©1993 American Institute of Physics.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Text