Corzine, Scott W., authorScott, J. W., authorChoquette, Kent D., authorWarren, Mial E., authorLear, Kevin L., authorHadley, G. Ronald, authorIEEE, publisher2007-01-032007-01-031996Hadley, G. Ronald, et al., Comprehensive Numerical Modeling of Vertical-Cavity Surface-Emitting Lasers, IEEE Journal of Quantum Electronics 32, no. 4 (April 1996): 607-616.http://hdl.handle.net/10217/830We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation.born digitalarticleseng©1996 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.band structurecarrier mobilityion implantationlaser cavity resonatorslaser modesquantum well lasersrefractive indexsemiconductor device modelssurface emitting lasersText