Osiński, M., authorFurioli, J., authorHammons, B. E., authorBanas, J. J., authorHou, H. Q., authorLear, Kevin L., authorIEE, publisher2007-01-032007-01-031997Lear, K. L., et al., Vertical Cavity Lasers on P-Doped Substrates, Electronics Letters 33, no. 9 (24 April 1997): 783-784.http://hdl.handle.net/10217/67866Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.born digitalarticleseng©1997 IEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.semiconductor junction lasersvertical cavity surface emitting lasersText