Choquette, Kent D., authorSchneider, Richard P., authorCrawford, Mary Hagerott, authorLear, Kevin L., authorIEEE, publisher2007-01-032007-01-031995Crawford, M. Hagerott, et al., Temperature-Dependent Characteristics and Single-Mode Performance of AIGaInP-Based 670-690-nm Vertical-Cavity Surface-Emitting Lasers, IEEE Photonics Technology Letters 7, no. 7 (July 1995): 724-726.http://hdl.handle.net/10217/837We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 °C from a 15-μm-diameter device.born digitalarticleseng©1995 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.gallium compoundsaluminium compoundsIII-V semiconductorsindium compoundslaser cavity resonatorslaser modessemiconductor laserssurface emitting lasersText