Rocca, Jorge J., authorNishimura, Kozo, authorMiyata, Koichi, authorMiyauchi, Sihigeaki, authorKobashi, Koji, authorMaterials Research Society, publisher2007-01-032007-01-031996Kobashi, Koji, et al., Etching of Polycrystalline Diamond Films by Electron Beam Assisted Plasma, Journal of Materials Research 11, no. 11 (November 1996): 2744-2748.http://hdl.handle.net/10217/67614Polycrystalline diamond films were processed in a direct current plasma produced by a self-focused electron beam using combinations of H2, O2, and He as the processing gas. The film surfaces were observed by scanning electron microscopy, and characterized by x-ray photoelectron spectroscopy. It was found that for the case in which O2 was included in the processing gas, a high density of etch pits appeared on (100) faces of diamond grains, and oxygen was either physisorbed or chemisorbed at the film surface. It was demonstrated that the etching apparatus used was capable of forming at least a 5-μm wide pattern of polycrystalline diamond film.born digitalarticleseng©1996 Materials Research Society.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.Etching of polycrystalline diamond films by electron beam assisted plasmaText