Warren, Mial E., authorLear, Kevin L., authorHou, Hong Q., authorChoquette, Kent D., authorTaylor, Edward W., authorSchöne, Harald, authorCarson, Richard F., authorPaxton, Alan H., authorIEEE, publisher2007-01-032007-01-031997Paxton, Alan H., et al., Damage from Proton Irradiation of Vertical-Cavity Surface-Emitting Lasers, IEEE Transactions on Nuclear Science 44, no. 6 (December 1997): 1893-1897.http://hdl.handle.net/10217/827Damage resulting from irradiating oxide-confined vertical-cavity surface-emitting lasers became significant (threshold shift ≈ 20%, peak power degradation ≈ 20%) at fluence levels approaching 1 × 1013 protons/cm2. The threshold current shifted to higher values, and the peak light output power decreased. Forward-current annealing led to partial recovery of the performance of two of the three lasers for which annealing was attempted. Recent results [1-3] on proton-implanted devices are summarized in a table.born digitalarticleseng©1997 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.proton effectssemiconductor laserslaser reliabilityannealingsurface emitting lasersText