Robinson, G. Y., authorHafich, M. J., authorChilla, J. L. A., authorRocca, Jorge J., authorMenoni, C. S., authorMartinez, O. E., authorPrasad, M., author[TMS], publisher2007-01-032007-01-031994Prasad, M., et al., Transient Grating Measurements of Ambipolar Diffusion and Carrier Recombination in InGaP/InAlP Multiple Quantum Wells and InGaP Bulk, Journal of Electronic Materials 23, no. 3 (1994): 359-362.http://hdl.handle.net/10217/67604The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of transient gratings induced by picosecond laser pulses. The multiple quantum well room temperature ambipolar diffusion coefficient of carrier transport parallel to the growth plane was measured to be approximately half that of the bulk material.born digitalarticleseng©1994 TMS.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.InGaP/InAlP multiple quantum wellambipolar diffusioncarrier recombinationText