Hull, Robert, authorFigiel, J. J., authorGeib, Kent M., authorSchneider, Richard P., authorLear, Kevin L., authorChoquette, Kent D., authorIEEE, publisher2007-01-032007-01-031995Choquette, Kent D., et al., Fabrication and Performance of Selectively Oxidized Vertical-Cavity Lasers, IEEE Photonics Technology Letters 7, no. 11 (November 1995): 1237-1239.http://hdl.handle.net/10217/838We report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. We show that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors. The oxide layers do not induce obvious crystalline defects, and continuous wave operation in excess of 650 h has been obtained. The high yield fabrication enables relatively high laser performance over a wide wavelength span. We observe submilliamp threshold currents over a wavelength range of up to 75 nm, and power conversion efficiencies at 1 mW output power of greater than 20% over a 50-nm wavelength range.born digitalarticleseng©1995 IEEE.Copyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.III-V semiconductorsaluminium compoundsdistributed Bragg reflector lasersgallium arsenidelaser cavity resonatorsoxidationquantum well laserssurface emitting lasersFabrication and performance of selectively oxidized vertical-cavity lasersText