• Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells 

        Author(s):Xu, Lifang; Patel, Dinesh; Menoni, Carmen S.; Pikal, Jon M.; Yeh, Jeng-Ya; Huang, J. Y. T.; Mawst, Luke J.; Tansu, Nelson
        The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T = 10 K – 300 K is investigated. The PL spectra observed at ...