Development of an electrochromic thin film transistor
A novel electrochromic thin film transistor (EC-TFT) was fabricated and characterized in this work. This concept relies on ion transport to control gating. The channel material is tungsten oxide (WOx), produced by reactive magnetron sputtering. In its oxidized state WO3 is a transparent, wide band gap insulator ([greater than] 3 eV). However upon intercalation of light ions (H+, Li+) the material becomes both electrically conducting and opaque to visible light. This allows the EC-TFT to generate a complementary optical response. We optimized the fabrication of individual layers of the EC-TFT, ...
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