Zinc silicon phosphide as a wide band gap semiconductor for integration with silicon
There has been a longstanding need for optically-active materials that can be integrated with Si, both for tandem photovoltaics and for other optoelectronic applications. We focus on ZnSiP2, a ternary III-V analog with 0.5% lattice mismatch with Si and a 2.1 eV band gap, nearly ideal for a top cell on a Si-based tandem device. We have shown that ZnSiP2 has many properties suitable for applications to Si-based tandem photovoltaics using bulk single crystals grown in a Zn flux. Here, we report the first photovoltaic measurements of ZnSiP2 using photoeletrochemistry. We show that ZnSiP2 has excellent ...
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